Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap like an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities. To date, experimental studies have found only integer QSH insulators with counter-propagating up-spins and down-spins at each edge leading to a quantized conductance G0=e^2/h. Here we report transport evidence of a fractional QSH insulator in 2.1-degree-twisted bilayer MoTe2, which supports spin-Sz conservation and flat spin-contrasting Chern bands.

We propose a "minimal" fractional topological insulator (mFTI), motivated by the recent experimental report on the signatures of FTI at total filling factor νtot=3 in a transition metal dichalcogenide (TMD) moiré system. The observed FTI at νtot=3 is likely given by a topological state living in a pair of half-filled conjugate Chern bands with Chern numbers C=±1 on top of another pair of fully-filled conjugate Chern bands. We propose the mFTI as a strong candidate topological state in the half-filled conjugate Chern bands.

The electron’s kinetic energy plays a pivotal role in magnetism. While virtual electron hopping promotes antiferromagnetism in an insulator, real hopping processes usually favour ferromagnetism. However, in kinetically frustrated systems such as hole-doped triangular lattice Mott insulators, real hopping has instead been shown to favour antiferromagnetism. Kinetic frustration has also been predicted to induce a new quasiparticle, a bound state of the doped hole and a spin flip called a spin polaron, at intermediate magnetic fields, which could form an unusual metallic state.

Large language models (LLMs) have demonstrated an unprecedented ability to perform complex tasks in multiple domains, including mathematical and scientific reasoning. We demonstrate that with carefully designed prompts, LLMs can accurately carry out key calculations in research papers in theoretical physics. We focus on a broadly used approximation method in quantum physics: the Hartree-Fock method, requiring an analytic multi-step calculation deriving approximate Hamiltonian and corresponding self-consistency equations.

Natural systems with emergent behaviors often organize along low-dimensional subsets of high-dimensional spaces. For example, despite the tens of thousands of genes in the human genome, the principled study of genomics is fruitful because biological processes rely on coordinated organization that results in lower dimensional phenotypes. To uncover this organization, many nonlinear dimensionality reduction techniques have successfully embedded high-dimensional data into low-dimensional spaces by preserving local similarities between data points.

There is great interest in “end-to-end” analysis that captures how innovation at the materials, device, and/or archi-tectural levels will impact figures of merit at the application-level. However, there are numerous combinations of devices and architectures to study, and we must establish systematic ways to accurately explore and cull a vast design space. We aim to capture how innovations at the materials/device-level may ultimately impact figures of merit associated with both existing and emerging technologies that may be employed for either logic and/or memory.

Plasma discharge lamps are widely utilized in the practice of angle-resolved photoemission spectroscopy (ARPES) experiments as narrow-linewidth ultraviolet photon sources. However, many emission lines such as Ar-I, Ne-I, and Ne-II have closely spaced doublet emission lines, which result in superimposed replica on the measured ARPES spectra. Here, we present a simple method for subtracting the contribution of these doublet emission lines from photoemission spectra.

The spin Hall effect (SHE), in which an electrical current generates a transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin–orbit coupling. In general, stronger spin–orbit coupling favours larger SHEs but shorter spin relaxation times and diffusion lengths. However, correlated magnetic materials often do not support large SHEs.

Two-dimensional moiré materials are formed by overlaying two layered crystals with small differences in orientation or/and lattice constant, where their direct coupling generates moiré potentials. Moiré materials have emerged as a platform for the discovery of new physics and device concepts, but while moiré materials are highly tunable, once formed, moiré lattices cannot be easily altered. Here we demonstrate the electrostatic imprinting of moiré lattices onto a target monolayer semiconductor.

Resonant ultrasound spectroscopy (RUS) is a powerful technique for measuring the full elastic tensor of a given material in a single experiment. Previously, this technique was practically limited to regularly shaped samples such as rectangular parallelepipeds, spheres, and cylinders [W. M. Visscher et al. J. Acoust. Soc. Am. 90, 2154 (1991)].