Lutetium-doped EuO films grown by molecular-beam epitaxy
Abstract
The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping. © 2012 American Institute of Physics.
Date Published
Journal
Applied Physics Letters
Volume
100
Issue
22
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84862154960&doi=10.1063%2f1.4723570&partnerID=40&md5=368b011ddef2770db96be6d334fd4ef0
DOI
10.1063/1.4723570
Research Area
Group (Lab)
Kyle Shen Group
Funding Source
20025
DMR 0843934
FA9550-10-1-0123
1120296
DGE-0654193
TRR 80