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Lutetium-doped EuO films grown by molecular-beam epitaxy

Cornell Affiliated Author(s)

Author

A. Melville
T. Mairoser
A. Schmehl
D.E. Shai
E.J. Monkman
J.W. Harter
T. Heeg
B. Holländer
J. Schubert
K.M. Shen
J. Mannhart
D.G. Schlom

Abstract

The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping. © 2012 American Institute of Physics.

Date Published

Journal

Applied Physics Letters

Volume

100

Issue

22

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84862154960&doi=10.1063%2f1.4723570&partnerID=40&md5=368b011ddef2770db96be6d334fd4ef0

DOI

10.1063/1.4723570

Group (Lab)

Kyle Shen Group

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