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Engineering Carrier Effective Masses in Ultrathin Quantum Wells of IrO2

Cornell Affiliated Author(s)

Author

J.K. Kawasaki
C.H. Kim
J.N. Nelson
S. Crisp
C.J. Zollner
E. Biegenwald
J.T. Heron
C.J. Fennie
D.G. Schlom
K.M. Shen

Abstract

The carrier effective mass plays a crucial role in modern electronic, optical, and catalytic devices and is fundamentally related to key properties of solids such as the mobility and density of states. Here we demonstrate a method to deterministically engineer the effective mass using spatial confinement in metallic quantum wells of the transition metal oxide IrO2. Using a combination of in situ angle-resolved photoemission spectroscopy measurements in conjunction with precise synthesis by oxide molecular-beam epitaxy, we show that the low-energy electronic subbands in ultrathin films of rutile IrO2 have their effective masses enhanced by up to a factor of 6 with respect to the bulk. The origin of this strikingly large mass enhancement is the confinement-induced quantization of the highly nonparabolic, three-dimensional electronic structure of IrO2 in the ultrathin limit. This mechanism lies in contrast to that observed in other transition metal oxides, in which mass enhancement tends to result from complex electron-electron interactions and is difficult to control. Our results demonstrate a general route towards the deterministic enhancement and engineering of carrier effective masses in spatially confined systems, based on an understanding of the three-dimensional bulk electronic structure. © 2018 American Physical Society.

Date Published

Journal

Physical Review Letters

Volume

121

Issue

17

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85055693537&doi=10.1103%2fPhysRevLett.121.176802&partnerID=40&md5=8da2fd8d4847579ef59c72b56e22221f

DOI

10.1103/PhysRevLett.121.176802

Group (Lab)

Kyle Shen Group

Funding Source

10.13039/100000001
DMR-1120296
DGE-1650441
10.13039/100000181
FA9550-12-1-0335
NSF
DMR-1120296
DMR-1120296
DMR-1539918

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