Electronic structure of SnSe2 films grown by molecular beam epitaxy
Abstract
SnSe2 is a layered main-group metal dichalcogenide that has exhibited gate-tunable interfacial superconductivity as well as promising optoelectronic applications. Here, we synthesize SnSe2 films by molecular beam epitaxy and investigate their electronic structure with angle-resolved photoemission spectroscopy (ARPES). A comparison between density functional theory calculations and ARPES data from a thick film reveals the importance of spin-orbit coupling and out-of-plane dispersion in the SnSe2 valence bands, which were neglected in previous studies of its electronic structure. We conclude that the conduction band minimum lies along the M-L direction in momentum space, while the valence band maximum lies along Γ-K. © 2019 Author(s).
Date Published
Journal
Applied Physics Letters
Volume
114
Issue
9
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062598748&doi=10.1063%2f1.5084147&partnerID=40&md5=f4cb89174b7c7729ecef57d12f858fb4
DOI
10.1063/1.5084147
Research Area
Group (Lab)
Kyle Shen Group