Electronic structure of SnSe2 films grown by molecular beam epitaxy
SnSe2 is a layered main-group metal dichalcogenide that has exhibited gate-tunable interfacial superconductivity as well as promising optoelectronic applications. Here, we synthesize SnSe2 films by molecular beam epitaxy and investigate their electronic structure with angle-resolved photoemission spectroscopy (ARPES). A comparison between density functional theory calculations and ARPES data from a thick film reveals the importance of spin-orbit coupling and out-of-plane dispersion in the SnSe2 valence bands, which were neglected in previous studies of its electronic structure. We conclude that the conduction band minimum lies along the M-L direction in momentum space, while the valence band maximum lies along Î“-K. Â© 2019 Author(s).