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Strain-engineering Mott-insulating La 2 CuO 4

Cornell Affiliated Author(s)

Author

O. Ivashko
M. Horio
W. Wan
N.B. Christensen
D.E. McNally
E. Paris
Y. Tseng
N.E. Shaik
H.M. Rønnow
H.I. Wei
C. Adamo
C. Lichtensteiger
M. Gibert
M.R. Beasley
K.M. Shen
J.M. Tomczak
T. Schmitt
J. Chang

Abstract

The transition temperature T c of unconventional superconductivity is often tunable. For a monolayer of FeSe, for example, the sweet spot is uniquely bound to titanium-oxide substrates. By contrast for La 2−x Sr x CuO 4 thin films, such substrates are sub-optimal and the highest T c is instead obtained using LaSrAlO 4 . An outstanding challenge is thus to understand the optimal conditions for superconductivity in thin films: which microscopic parameters drive the change in T c and how can we tune them? Here we demonstrate, by a combination of x-ray absorption and resonant inelastic x-ray scattering spectroscopy, how the Coulomb and magnetic-exchange interaction of La 2 CuO 4 thin films can be enhanced by compressive strain. Our experiments and theoretical calculations establish that the substrate producing the largest T c under doping also generates the largest nearest neighbour hopping integral, Coulomb and magnetic-exchange interaction. We hence suggest optimising the parent Mott state as a strategy for enhancing the superconducting transition temperature in cuprates. © 2019, The Author(s).

Date Published

Journal

Nature Communications

Volume

10

Issue

1

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85061846457&doi=10.1038%2fs41467-019-08664-6&partnerID=40&md5=b1fe5df7178674c2db76dcb3b71071da

DOI

10.1038/s41467-019-08664-6

Group (Lab)

Kyle Shen Group

Funding Source

FA9550-15-1-0474
200021-169061
FA9550-09-1-0583
BSSGI0_155873
CRSII2_160765/1
51NF40_141828

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