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Mott gap collapse in lightly hole-doped Sr2−xKxIrO4

Cornell Affiliated Author(s)

Author

J.N. Nelson
C.T. Parzyck
B.D. Faeth
J.K. Kawasaki
D.G. Schlom
K.M. Shen

Abstract

The evolution of Sr2IrO4 upon carrier doping has been a subject of intense interest, due to its similarities to the parent cuprates, yet the intrinsic behaviour of Sr2IrO4 upon hole doping remains enigmatic. Here, we synthesize and investigate hole-doped Sr2−xKxIrO4 utilizing a combination of reactive oxide molecular-beam epitaxy, substitutional diffusion and in-situ angle-resolved photoemission spectroscopy. Upon hole doping, we observe the formation of a coherent, two-band Fermi surface, consisting of both hole pockets centred at (π, 0) and electron pockets centred at (π/2, π/2). In particular, the strong similarities between the Fermi surface topology and quasiparticle band structure of hole- and electron-doped Sr2IrO4 are striking given the different internal structure of doped electrons versus holes. © 2020, The Author(s).

Date Published

Journal

Nature Communications

Volume

11

Issue

1

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85085197895&doi=10.1038%2fs41467-020-16425-z&partnerID=40&md5=1c28289a68c2c63f11cc8fb31c27b28e

DOI

10.1038/s41467-020-16425-z

Group (Lab)

Kyle Shen Group

Funding Source

PHY-1549132
DMR-1719875
1709255
DMR-1539918
DMR-1709255
ECCS-1542081
FA9550-15-1-0474
DGE-1650441
GBMF3850

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