High Dynamic Range X-Ray Detector Pixel Architectures Utilizing Charge Removal
Several charge integrating CMOS pixel front ends utilizing charge removal techniques have been fabricated to extend dynamic range for X-ray diffraction applications at synchrotron sources and X-ray free electron lasers (XFELs). The pixels described herein build on the mixed mode pixel array detector (MM-PAD) framework, developed previously by our group to perform high dynamic range imaging. These new pixels boast several orders of magnitude improvement in maximum flux over the MM-PAD, which is capable of measuring a sustained flux in excess of 108 X-rays/pixel/s while maintaining sensitivity to smaller signals, down to single X-rays. To extend dynamic range, charge is removed from the integration node of the front-end amplifier without interrupting integration. The number of times this process occurs is recorded by a digital counter in the pixel. The parameter limiting full well is, thereby, shifted from the size of an integration capacitor to the depth of a digital counter. The result is similar to that achieved by counting pixel array detectors, but the integrators presented here are designed to tolerate a sustained flux >1011 X-rays/pixel/s. Pixel front-end linearity was evaluated by direct current injection and results are presented. A small-scale readout ASIC utilizing these pixel architectures has been fabricated and the use of these architectures to increase single X-ray pulse dynamic range at XFELs is discussed briefly. © 2017 IEEE.