Skip to main content

Controlling magnetism in 2D CrI3 by electrostatic doping

Cornell Affiliated Author(s)

Author

S. Jiang
L. Li
Z. Wang
K.F. Mak
J. Shan

Abstract

The atomic thickness of two-dimensional materials provides a unique opportunity to control their electrical 1 and optical 2 properties as well as to drive the electronic phase transitions 3 by electrostatic doping. The discovery of two-dimensional magnetic materials 4-10 has opened up the prospect of the electrical control of magnetism and the realization of new functional devices 11 . A recent experiment based on the linear magneto-electric effect has demonstrated control of the magnetic order in bilayer CrI3 by electric fields 12 . However, this approach is limited to non-centrosymmetric materials 11,13-16 magnetically biased near the antiferromagnet-ferromagnet transition. Here, we demonstrate control of the magnetic properties of both monolayer and bilayer CrI3 by electrostatic doping using CrI3-graphene vertical heterostructures. In monolayer CrI3, doping significantly modifies the saturation magnetization, coercive force and Curie temperature, showing strengthened/weakened magnetic order with hole/electron doping. Remarkably, in bilayer CrI3, the electron doping above 2.5 × 1013 cm-2 induces a transition from an antiferromagnetic to a ferromagnetic ground state in the absence of a magnetic field. The result reveals a strongly doping-dependent interlayer exchange coupling, which enables robust switching of magnetization in bilayer CrI3 by small gate voltages. © 2018 The Author(s).

Date Published

Journal

Nature Nanotechnology

Volume

13

Issue

7

Number of Pages

549-553,

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046542032&doi=10.1038%2fs41565-018-0135-x&partnerID=40&md5=08eb856c47b773b1ea5941fec8395389

DOI

10.1038/s41565-018-0135-x

Group (Lab)

Jie Shan Group
Kin Fai Mak Group

Download citation