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Electrical switching of valley polarization in monolayer semiconductors

Cornell Affiliated Author(s)

Author

L. Li
S. Jiang
Z. Wang
K. Watanabe
T. Taniguchi
J. Shan
K.F. Mak

Abstract

Achieving on-demand control of the valley degree of freedom is essential for valley-based information science and technology. Optical and magnetic control of the valley degree of freedom in monolayer transition-metal dichalcogenide (TMD) semiconductors has been studied extensively. However, electrical control of the valley polarization has remained a challenge. Here we demonstrate switching of the valley polarization in monolayer WSe2 by electrical gating. This is achieved by coupling a WSe2 monolayer to a two-dimensional (2D) layered magnetic insulator CrI3. The valley degeneracy in WSe2 is lifted by the magnetic proximity effect. The valley polarization is switched through gate control of the interlayer spin-flip transition in 2D CrI3, which switches the magnetization of the CrI3 layer adjacent to the WSe2 layer. The effect is manifested by a sign change in the photoluminescence handedness of WSe2. Our results provide the basis for high-speed and energy-efficient gate control of the valley degree of freedom in monolayer TMD semiconductors. © 2020 American Physical Society.

Date Published

Journal

Physical Review Materials

Volume

4

Issue

10

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85094120085&doi=10.1103%2fPhysRevMaterials.4.104005&partnerID=40&md5=78488b4bd03a00d0a72c5b7d5f3b0fbd

DOI

10.1103/PhysRevMaterials.4.104005

Group (Lab)

Jie Shan Group
Kin Fai Mak Group

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