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BLAST: A Wafer-Scale Transfer Process for Heterogeneous Integration of Optics and Electronics

Cornell Affiliated Author(s)

Author

Y. Ji
A.J. Cortese
C.L. Smart
A.C. Molnar
P.L. McEuen

Abstract

A general transfer method is presented for the heterogeneous integration of different photonic and electronic materials systems and devices into a single substrate. Called BLAST, for Bond, Lift, Align, and Slide Transfer, the process works at wafer scale and offers precision alignment, high yield, varying topographies, and suitability for subsequent lithographic processing. BLAST's capabilities is demonstrated by integrating both GaAs and GaN µLEDs with silicon photovoltaics to fabricate optical wireless integrated circuits that up-convert photons from the red to the blue. The study also shows that BLAST can be applied to a variety of other devices and substrates, including CMOS electronics, vertical cavity surface emitting lasers (VCSELs), and 2D materials. BLAST further enables the modularization of optoelectronic microsystems, where optical devices fabricated on one material substrate can be lithographically integrated with electronic devices on a different substrate in a scalable process. © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

Date Published

Journal

Advanced Electronic Materials

Volume

9

Issue

12

Type of Article

Article

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85175290263&doi=10.1002%2faelm.202300438&partnerID=40&md5=f05b8d7a702369d798f39c1d26e764fe

DOI

10.1002/aelm.202300438

Group (Lab)

Paul McEuen Group

Funding Source

NNCI‐2025233
DMR1719875
FA9550‐16‐1‐0031

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