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Semiconductor moiré materials

Cornell Affiliated Author(s)

Author

K.F. Mak
J. Shan

Abstract

Moiré materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moiré materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane–Mele–Hubbard physics and equilibrium moiré excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moiré materials. © 2022, Springer Nature Limited.

Date Published

Journal

Nature Nanotechnology

Volume

17

Issue

7

Number of Pages

686-695,

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85134311958&doi=10.1038%2fs41565-022-01165-6&partnerID=40&md5=9af449562aa7c71ef88c9639e696a1a1

DOI

10.1038/s41565-022-01165-6

Group (Lab)

Jie Shan Group
Kin Fai Mak Group

Funding Source

DMR- 2114535
N00014-21-1-2471

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