Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
Abstract
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ∼70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics. © 2013 American Chemical Society.
Date Published
Journal
Nano Letters
Volume
13
Issue
6
Number of Pages
2931-2936,
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84879076657&doi=10.1021%2fnl4013166&partnerID=40&md5=15c7739881108089052b9f5c13972c39
DOI
10.1021/nl4013166
Research Area
Group (Lab)
Jie Shan Group
Kin Fai Mak Group
Funding Source
0349201
0907477