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Nonlinear anomalous Hall effect in few-layer WTe 2

Cornell Affiliated Author(s)

Author

K. Kang
T. Li
E. Sohn
J. Shan
K.F. Mak

Abstract

The Hall effect occurs only in systems with broken time-reversal symmetry, such as materials under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE) 1 . Here we show a nonlinear AHE in a non-magnetic material under zero magnetic field, in which the Hall voltage depends quadratically on the longitudinal current 2–6 . We observe the effect in few-layer T d -WTe 2 , a two-dimensional semimetal with broken inversion symmetry and only one mirror line in the crystal plane. Our angle-resolved electrical measurements reveal that the Hall voltage maximizes (vanishes) when the bias current is perpendicular (parallel) to the mirror line. The observed effect can be understood as an AHE induced by the bias current, which generates an out-of-plane magnetization. The temperature dependence of the Hall conductivity further suggests that both the intrinsic Berry curvature dipole and extrinsic spin-dependent scatterings contribute to the observed nonlinear AHE. © 2019, The Author(s), under exclusive licence to Springer Nature Limited.

Date Published

Journal

Nature Materials

Volume

18

Issue

4

Number of Pages

324-328,

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062065489&doi=10.1038%2fs41563-019-0294-7&partnerID=40&md5=f6c7ef0f15060e2025c9579566ca5486

DOI

10.1038/s41563-019-0294-7

Group (Lab)

Jie Shan Group
Kin Fai Mak Group

Funding Source

DMR-1719875
NNCI-1542081
W911NF-17-1-0605

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